Shaandheeyayaasha C-Shaabadda ee Korjoogteynta Sare ee IGS ee loogu talagalay Nidaamyada Gaaska Semiconductor-ka ee Ultra-Pure

Sharaxaad Gaaban:

Summada:HENGKO

Magaca Shaandheeyaha:Shaandhada C-Shaabadda ee IGS oogada sare

Qalabka:SS 316L

Heerka socodka:10 ~ 120 SLPM

Heerkulka ugu badan ee hawlgalka:460° C

Cabbirka ka saarista walxaha:> 0.003 μm

Noo soo dir emayl Ku laabo Qaybaha Hoose

Faahfaahinta Badeecada

Calaamadaha Alaabta

Sharaxaad

Shaandheeyayaasha Hengko Surface Mount waxaa loogu talagalay inay buuxiyaan shuruudaha adag ee nidaamyada gaaska ee isku dhafan ee loo isticmaalo qalabka semiconductor OEM. Iyagoo bixiya shaandheyn hormuud u ah warshadaha oo ah 0.003 µm, shaandheeyayaashani waxay hubiyaan waxqabad heer sare ah iyo isku hallayn leh hufnaan dhexgal ah oo ah ≥99.9999999% (9-LRV) 120 slm.

Waxaa laga sameeyay budada birta aan miridhku lahayn ee 316L oo sintered ah loogu sameeyay walxaha shaandhada iyo hoyga, shaandheeyayaashani waxay u hoggaansamaan qeexitaannada SEMI F86-0304, oo leh qaybo laba-deked ah oo loogu talagalay nidaamyada qaybinta gaaska 1.125” oo leh habayn C-shaab ah. Waxay taageeraan cadaadiska ugu badan ee gelitaanka ee 3.4 MPa 100°C iyo kala duwanaanshaha cadaadiska hawlgalka ugu badan ee 0.69 MPa 100°C.

Shaandheeyayaashan gaarka ah, oo la jaanqaadaya shuruudaha shaabadda nooca C iyo nooca W, waxay gaaraan nadiifin hoose iyadoo la sii daayo walxaha

Iyada oo leh dhammaystir dusha sare ah oo Ra ah< 1.6 µm dibadda iyo RaIyada oo ka yar 0.13 µm gudaha, waxaa loogu talagalay inay u adkeystaan heerkulka sare ilaa 460°C. Waxaa loo sameeyay is-dhexgal fudud iyo casriyeynta naqshadaha moodeelka ah, shaandheeyayaashani waxay fududeeyaan rakibidda iyo dayactirka, iyagoo gacan ka geysanaya hagaajinta waxqabadka nidaamka gaarsiinta gaaska semiconductor-ka iyo codsiyada xakamaynta.

Tilmaamaha Alaabta

▶ Guud ahaan dhismaha birta aan daxalka lahayn oo ah 316L
▶ Naqshad yar, qaab-dhismeed yar, iyo meel badbaadinaysa
▶ Astaamaha beddelka iyo ka saarista gaaska oo aad u fiican
▶ Heerkulka sare, cadaadiska sare, iyo u adkaysta miridhku
▶ Guryo bir ah oo 316L ah oo koronto lagu safeeyey
▶ Rakibaadda iyo dayactirka fudud oo hufan
▶ Shaabad farsamo, qaab dhismeed ahaan aan la alxanayn ilaa dhexdhexaadka

Shaandheeyayaasha Shaabadda C ee Dusha Sare ee IGS ee loogu talagalay Nidaamyada Bixinta Gaaska Semiconductor-ka

Xog-warqad

Halbeegyada Farsamada	Qiimaha
Walxaha Shaandheeyaha	Budada Birta Aan Daxalka Ahayn ee 316L
Qalabka Guryaha	Bir aan miridh lahayn oo 316L ah
Cadaadiska ugu Badan ee Soo Galka	3.4 MPa @ 100°C
Kala duwanaanshaha Hawlgalka Ugu Badan	0.69 MPa @ 100°C
Heerka Daadinta Xaqiijinta Helium	1x10⁻¹¹¹ cc/daqiiqo
Heerka Daadashada Tijaabada Helium	1x10⁻⁹ cc/daqiiqo
Daaweynta Dusha Sare	Dusha sare ee Ra< 1.6 μm
	Dusha sare ee gudaha Ra< 0.13 μm
Heerkulka Hawlgalka Ugu Badan	460°C
Waxtarka Ka-goynta Walxaha	≥99.9999999% (9-LRV) @ 120 slpm (MPPS Tixraaca, dhammaan walxaha)
Nadiifinta Hoose	Sii deynta walxaha:< 0.03 walxood/litir (< 1 walax/ft³)
	Isbeddela:Qoyaan < 10 ppb
Cabbirka Ka-goynta Walxaha	≥0.003 μm
Kala Duwanaanshaha Socodka	0 ~ 120 slpm